Indium phosphide magic-sized clusters: chemistry and applications

Electronic structure of indium phosphide clusters: anion

Ž . Photoelectron spectra for indium phosphide InP cluster anions comprised of up to 27 atoms were measured at a photodetachment wavelength of 266 nm. Results are presented for cluster anions of both stoichiometric and non-stoichiometŽ y y . Ž . ric composition In P , In P ; xs1–13 . In P exhibits the lowest electron affinity EA of all the clusters studied, x x xq1 x 3 3 indicating a particular...

Indium phosphide nanowires and their applications in optoelectronic devices.

Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphid...

Polymorphism in magic-sized Au144(SR)60 clusters

Ultra-small, magic-sized metal nanoclusters represent an important new class of materials with properties between molecules and particles. However, their small size challenges the conventional methods for structure characterization. Here we present the structure of ultra-stable Au144(SR)60 magic-sized nanoclusters obtained from atomic pair distribution function analysis of X-ray powder diffract...

Magnetopolaron interactions in n-type indium phosphide

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orie...